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		Bess a Source Structure That Fuliy SuppressesFloating Body Effets in Soi Cmosfet'S by Horiuchi, M Tamura, M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Current Smali-Parasitic-Capacitance Mosfet on a Poly-Si Interlayed (Psi-)Soi Wafer by Horiuchi, M Teshima, Kszuya Yamaguchi, Ken Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Ripple Compensation for torque Sensors Built Into Harmonic Drives. by Horiuchi, M Gadler, I Source: Ieee Transactions on Instrumentation and Measurement Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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