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Trading Off Programming Speed and Current Absorption in Flash Memories with Ramped Gate Programming Technique by
  • Esseni, David
  • Ricco, Bruno
  • Tassan, S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A New and Flexible Scheme for Hot-Electron Programming of Nonvolatile Memory Celis by
  • Esseni, David
  • Cappelietti, Paolo
  • Ricco, Bruno
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Modeling and Simulation of Stress-Induced Leakage Current in Ultrathin Sio2 Films by
  • Ricco, Bruno
  • Gozzi, Gianfranco
  • Lanzoni, Nassimo
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Erratic Cell Behavior in Channel Hot Electron Programming of Nor Flash Memories by
  • Grossi, Marco
  • Lanzoni, Massimo
  • Ricco, Bruno
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Novel Algorithm for High-Throughput Programming of Multilevel Flash Memories by
  • Grossi, Marco
  • Lanzoni, Massimo
  • Ricco, Bruno
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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