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		An Analytical Drain Current Model of Short-Channel Mosfets Including Source/Drain Resistance Effect by Liou, J J Ho, C S Source: International Journal of Electronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New 2-D Model for Potential Distrution and Threshold Voltage of Fully Depleted Short-Channel Si-Soi Mesfets by Pandey, Prashant Pal, B.B Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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