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		A Comparison of Hot-Carrier Degradation in Tungsten Polycide Gate and Poly Gate P-Mosfet'S by Ang, D. S ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Unique Dual-Poly Gate Technology for 1.2-V Mobile Dram with Simple in Situ N-Doped Polysilicon by Son, Nak-Jin Oh, Yongchul Yang, Wouns Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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