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A Comparison of Hot-Carrier Degradation in Tungsten Polycide Gate and Poly Gate P-Mosfet'S by
  • Ang, D. S
  • ling, C. H
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Effect of Mobile Charge on Hot-Carrier Degradation in Lateral Diffused Mosfet by
  • Wei, T
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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