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		Reevaluation Oflimit on Si Bipolar Transistors by Ng, Kwok K Frei, Michel R ling, Clif for d A Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Measurements of Unity Cutoff Frequency and Saturation Velocity of A Gan Hemt Transistor by Oxley, C H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design Optimization of Allnas-Gainas Hemts for High-Frequency Applications by Lopez, Javier Gonzalez, tomas Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		1.5-Nm Gate Oxide Cmos on (110) Surface-Oriented Si Substrate by Momose, Hisayo Sasaki Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Performance Self-Aligned Sigec Hibt with Selectively Grown Si Base By Uhv/Cvd by Oda, Katsuya Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Elastodynamic Model for Large-Diameter End-Bearing Shafts by Mylonakis, G Source: Soils and Foundations Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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