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		Characteristics OfBase Coupled Insulated Gate Thyristor Experiment and Analytical Modeling by Ajit, J. S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Compact Velocity-Overshoot Model for Deep-Submicron Bipolar Devices Considering Energy Transport by Wu, Hung-Chih Kuo, James B Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thermal Instability of Low Voltage Power Mosfet'S. by Consoli, A Gennaro, F Source: Ieee Transactions on PowerElectronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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