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Two-Dimensional Doping Profile Characterization of Mosfet'S by Inverse Modeling Using Characteristics InSubthreshold Region by
  • Lee, Zachary K
  • Mclirath, Michael B
  • Antoniadis, Dimitri A
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Simulation Study of Gate Iine Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices by
  • Xiong, Shiying
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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