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		Design and Fabrication of Double Modulation Doped Inaias/Inas Heterojunction Fet'S for High-Speed and Mililmeter-Wave Applications by Xu, Dong Heib, Heiner G Krause, S. A Bohm, G Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thyristor Photovltaic Devices Formed by Epitaxial Growth by Wenham, Atuart R Koschier, linda M Nastac, L Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 0.1 Delta-Doped Mosfet Fabricated with Post-Low-Energy Implanting Selective Epitaxy by Noda, Kenji Tatsumi, Toru Nakajima, Ken Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Room Temperature Photocurrent Spectroscopy of Sige/Si Photodiodes Grown by Selective Epitaxy by Vonsovici, Adrian Vescan, lili Koster, Alain Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Sodel Fet: Novelchannel and Source/Drain Profile Engineering Schemes By Selective Si Epitaxial Growth Technology by Inaba, S Miyano, Shinji Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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