Your search returned 6 results.

Results
		Reliability Testing of Inp Hemt,S Using Electrical Stress Methods by Borgarino, Mattia Menozzi, Roberto Zanden, Koen Van Der Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Single-Voltage-Supply Highly Efficient E/D Dual-Gate Pseudomorphic Double-Hetero Hemt'S with Platinum Buried Gates by Tanimoto, Takuma Ohbu, Isao Tanaka, Satoshi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analysis OfKink Phenomena in Inalas/Ingaas Hemt'S Using Two-Dimensional Device Simulation by Suemitsu, T Enoki, Takatomo Sano, N Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Enhanacement of High-Temperature High-Frequency Performance of Gaas-Based Fet'S byHigh-Temperature Electronic Technique by Narasimhan, R Sadwick, L. P Hwu, Ruey J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Surface-States Effects on Gaas Fet Electrical Performance by Ohno, Y Francis, Prancis Nogome, Masanobu Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Spice Mosfet Level 3- like Model of Hemt'S for Circuits Simulation by Dasgupta, Nandita Dasgupta, Amitava Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

Visit counter For Websites

Copyright © Engr Abul Kalam Library, NEDUET, 2024

Report a problem