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		Approaches to Extra Low Voltage Dram Operation by Soi-Dram by Eimori, Takahisa Oashi, Toshiyuki Morishita, Fukashi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onPower Dissipation in Dynamic Thershold Silicon-Insulator Cmos Inverter by Philip, J.W Chan, C H Chan, Mansun Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effect of Floating-Body Charge on Soi Mosfet Design by Wei, andy Sherony, Melanie J Antoniadis, Dimitri A Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Monte Carlo Simulation of Electron Transpot Properties in Extremely Thin Soi Mosfet'S by Gamiz, Francisco Roldan, J B Carcelier, J. E Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onModeling of Surface Roughness Limited Mobility in Soi Mosfets and Its Correlation toTransistor Effective Field by Esseni, D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Device Design for Subthreshold Slope and Threshold Voltage Control in Sub-100-Nm Fully Depleted Soi Mosfets by Numata, toshinori Ichi, Shin Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Quantum Simulations of An Ultrashort Channel Single-Gated N-Mosfet on Soi by Knoch, J Lengeler, B Appenzeller, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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