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Silicon-Germanium Bicmos Hbt Technology for Wireless Power Amplifier Applications by
  • Johnson, Jeffrey B
  • Sheridan, David C
  • Abasi, Fariborz
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Simulation and Design of Inaias/Ingaas Pnp Heterojunction Bipolar Transistors by
  • Datta, S.N
  • Shi, Shen
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Measurements of Ingap Electron Ionization Coefficient Using Ingap-Gaas-Ingap Double Hbts by
  • Neo, Wah-Peng
  • Radhakrishnan, K
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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