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A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet by
  • Cheng, Zhi-Uuan
  • ling, C. H
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Modeling of Drain Current Overshoot and Recombination Lifetime Extraction in Floating-Body Submicron Soi Mosfets by
  • Munteanu, D
  • Lonescu, A.-M
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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