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		Optimization of Active Channel Thickness of Mm-Wavelenght Gaas Mesfet'S by Using a NOnlinear/-V Model by Ahmed, Mansoor M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Synthesis of Operational Transconductance Amplifier-Based Analog Fuzzy Functional Blocks and its Application by Tsukano, Kyoko Inoue, Takahiro Source: IEEE Transactions on Fuzzy Systems Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Opticaliy-Controlied Ion-Implanted Gaas Mesfet Characteristic with Opaque Gate by Pal, B.B Khan, R. U Shubhanga, K.N Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Asymmetricaliy Doped Buried-Layer Structure for Low-Voltage Mixed Analog-Digital Cmos Lsi'S by Miyamoto, Masafumi Toyota, Kenji Seki, Koichi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Characterization ofFrequency Dispersion of Transconductance and Drain Conductance of Gaas Mesfet by Hasumi, Yumiko Kodera, Hiroshi Oshima, Tsutomu Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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