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		A 1.8-V Mosfet-only Modulator Using Substrate Biased Depletion-Mode Mos Capacitors in Series Compensation by Tilie, Thomas Sauerbrey, Jens Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Roles of Electric Fields and lilumination Levels in PassivatingSurface of Silicon Solar Celis by Bai, Ying Phililps, J.C Barnett, Jonathan Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Measurement Time Reduction for Generation lifetimes by Lee, Sang-Yun Schroder, Dieter K Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on Silicon by Kolodzey, James Chen, Shong-Chin Olowolafe, Johnson Olufemi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation of Electron-Hole Generation in Mos Capacitors on 4h Sic by Han, Jisheng Dimitrijev, Sima Cheong, Kuan Yew Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Characterization and Process Control of Cost-Effective High-K Aluminum Oxide Gate Dielectrics Prepared By Anodization Followed By Furnace Annealing by Huang, Szu-Wei Hwu, Jenn-Gwo Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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