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		A 76-Mm2 8-Mb Chain Ferroelectric Memory by Takashima, Daisaburo Takeuchi, Yoshiaki Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 32-Mb Chain Feram with Segment/Stitch Array Architecture by Roehr, Thomas Jacob, Michael Beitel, Gerhard Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		512-Mb Prom with A Three-Dimensional Array Diode/Antifuse Memory Cells by Johnson, Mark -Shamma, Ali Al Lee, Thomas Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 1.8-V 128-Mb 125-Mhz Multilevel Cell Flash Memory with Flexible Read While Write by Elmhurst, Daniel Goldman, Matthew Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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