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		A Comprehensive Study of Hot-Carrier Induced Interface and Oxide Trap Distributions in Mosfet'S Using a Novel Charge Pumping Technique by Mahapatra, S Parikh, Chetan D Viswanathan, Chand R Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New "Multifrequency" Charge Pumping Technique to Profile Hot-Carrier-Induced Interface-State Density in Nmosfet'S by Mahapatra, S Parikh, Chetan D Vasi, J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Evaluation of Mos Interface-Trap Charge Pump As An Ultralow Constant-Current Generator by Cilingiroglu, Ugur Gomez, Adriana Becker- Veeder, Kenton T Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Optmization and Realization of Sub-100-Nm Channel Length Single Halo P-Mosfets by Borse, D G K.N, M. Rani Jha, N.K Chandorkar, A. N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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