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Micromechanical Resonators with Submicron Capacitive Gaps in 2 ?M Process by
  • Shao, L
  • Palaniapan, M
  • Khine, Y. Y
Source: IET:Iee: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Theoretical Study ofPerformance of Sub-Micron Mosfet Devices InPresence of Edge Potential by
  • Singh, A. K
  • Kiran, V P
  • Kumar, R G
Source: International Journal of Electronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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