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		3-Dimensional Numerical Analysis of Deep Depletion Buried Channel Mosfets and Ccds by Kim, Man-Ho Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thed Characterizing Analysis of a Buried-Channel Mosfet Based on The-3-D Numerical Simulation by Kim, Man-Ho Kim, Jongsoo Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Amorphous Silicon Buried-Channel Thin-Film Transistors by Weber, Cory Abelson, John R Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		0.15-M Buried-Channel P-Mosfet'S with Ultrathin Boron-Doped Epitaxial Si Layer by Ohguro, Tatsuya Usuda, Kouji Momose, Hisaya Sasaki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Inimproved Technique and Experimental Results for Extraction of Electron and Hole Mobilities in Mos Accumulation Layers by Chindalore, G. L Mckeon, J. B Mudanai, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Short-Channel Modeling of Bulk Accumulated Mosfets by Murali, Raghunath Austin, Blanca Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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