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		Novel Design Methodology Using Automated Model Parameter Generation by Virtual Device Fabrication by Lee, Jun-Ha Lee, Hoon Joo Source: International Transactions on Electrophysics and Applications Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Wordline Voltage Generating System for Low-Power Low-Voltage Flash Memories by Tanzawa, Toru Umezawa, Akira Miyaba, Takeshi Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Flash Memory Technoplogy with Quasi-Virtual Ground Array for Low-Cost Embedded Applications by Houdt, Jan Van Tsouhlarakis, Jorgo Verhoeven, Geert Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design of a Sense Circuit for Low-Voltage Flash Memories by Tanzawa, Toru Takano, Yoshinori Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis of Enhanced Hot-Carrier Effects in Scaled Flash Memory Devices by Chen, Chun-Chi liu, Zhi-Zheng Ma, T-P Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Statistical Simulations for Flash Memory Reliability Analysis and Prediction by Larcher, Luca Pavan, Paolo Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Correlated Generation of Oxide Defects on Silc and Breakdown Distributions by Ielmini, Daniele Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Defect Generation Statistics in Thin Gate Oxides by Ielmini, Daniele Spinakis, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories by Degraeve, Robin Schuler, F Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onPhysical Mechanism ofNrom Memory Erase by Larcher, Luca Pavan, Paolo Eitan, Boaz Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Erratic Erase in Flash Memories-Part I: Basic Experimental Statistical Characterization by Chimenton, andrea Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Erratic Erase in Flash Memories- Part Ii: Dependence on Operating Conditions by Chimenton, andrea Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Statistical Simulation of Leakage Current in Mos and Flash Memory Devices with A New Multiphonon Trap-Assisted Tunneling by Larcher, Luca Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Programming Charge Distribution on Threshold Voltage and Subthreshold Slope of Nrom Memory Cells by Larcher, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 44-Mm Four-Bank Eight-Word Page-Read 64-Mb Flash Memory with Flexible Block Redundancy and Fast Accurate Word-Line Voltage Controller by Tanzawa, toru Umezawa, Akira Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A 125-Mm 1-Gb Nand Flash Memory with 10-Mbyte/S Progam Speed by Imamiiya, Kenichi Nakamura, Hiroshi Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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