Results of search for 'an:756188' › Engr Abul Kalam Library catalog

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		Eenhancement of Ferromagnetic Properties in In1.99co0.01o3 by Additional Cu Dopingffect of Composition onTexture and Deformation Behaviour of Wrought Mg Alioys by li, Xing Xia, Changtai Source: Scripta Materialia Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Studies of Magnetic Interactions in Mn-Doped ?-Ga2o3 from First-Principles Calculations by Pei, Guangqing Source: Scripta Materialia Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis OfShort-Term Dc-Current Gain Variation During High Current Density Low Temperature Stress of Algaas/Faas Heterojunction Bipolar Transistors by Bovolon, Nicola Schultheis, Rudiger Mulier, Jan-Erik Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Bcb-Bridged Distributed Wideband Spst Switch Using 0.25 Um in 0.5 As Metamorphic Hemts by Lin, K. C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High-Voltage Normally off Gan Mosfets on Sapphire Substrates by Matocha, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling and Analysis of Znse-Ge Hbts by Abdel-Motaleb, I M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hydrogen Sensitivity of Inp Hemts with Wsin-Based Gate Stack by Mertens, Sander Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Velocity Overshoot Effects and Scaling Issues in Iii-V Nitrides by Singh, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Thermal Modeling and Measurement of Aigan-Gan Hfets Built on Sapphire and Sic Substrates by Park, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Numerical Analysis of Slow Current Transients and Power Compression in Gaas Fets by Kazami, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Simulation and Properties of Transitions to Traveling-Wave Deflection Systems by Staras, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Use of Wnx AsDiffusion Barrier for Interconnect Copper Metallization of Ingap-Gaap-Gaas Hbts by Chang, S W Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytic Model of 1-V Characteristics of 4h-Sic Mesfets Based on Multiparameter Mobility Model by Lv, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Experimental Investigation ofTemperature Dependence of Inas-Aisb-Gasb Resonant Interband Tunnel Diodes by Xu, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Temperature-Dependent Large-Signal Model of Heterojunction Bipolar Transistor with A Unified Approach for Self-Heating and Ambient Temperature Effects by Park, H.M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Growth of Ultrahigh Carbon -Doped Ingaas and Its Application to Inp/Ingaas(C) Hbts by Han, J. C Song, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Novel Soi P-Channel Mosfets with Higher Strain in Si Channel Using Double Sige Heterostructures by Mizuno, T Sugiyama, N Tezuka, A Takagi, S.-I Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Avalanche Phenomena in 4h-Sic P-N Diodes Fabricated By Aluminum Or Boron Implantation by Negoro, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Requirements for Low Intermodulation Distortion in Gan-Alx Ga1-Zn High Electron Mobility Transistors: A Model Assessment by Li, T Joshi, R. R Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Anonquasi-Static Table-Based Small-Signal Model of Heterojunciton Bipolar Transistor by Ko, S Koh, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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