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		Underwater Discharge Phenomena in Inhomogeneous Electric Fields Caused by Impulse Voltages by Lee, Bok-Hee Kim, Dong-Seong Chio, Jong-Hyuk Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Bess a Source Structure That Fuliy SuppressesFloating Body Effets in Soi Cmosfet'S by Horiuchi, M Tamura, M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Effect of Gate Recess Profile on Device Performance of Ga Doped-Channel Fet'S by Lu, Shey-Shi Meng, Chin-Chun lin, Yo-Sheng Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Lateral Igbt in Thin Sol for High Voltage, High Speed Power Ic by Leung, Ying-Keung Paul, Amit K Wong, S Simon Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Off-State Breakdown in Power Phemt'SImpact OfSource by Somervilie, Mark H Alamo, Jesos Saunier, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Impact of Collector-Base Junction Traps on Low-Frequency Noise in High Breakdown Voltage Sige Hbts by Tang, Jin Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Detection and Optimization of Temperature Distribution Across Large-Area Power Mosfets to Improve Energy Capability by Khemka, Vishnu Parthasarathy, V Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Nonlocal Effects in Thin 4h-Sic Uv Avalanche Photodiodes by Ng, B K David, P R Rees, Graham J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analytical Model for Breakdown Voltage of Gated Diodes] by Han, S.K Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Breakdown Voltage and on-Resistance of Multi-Resurf Ldmos by Choi, K Choi, Y.I Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A No-Snapback Ldmosfet with Automotive Esd Endurance by Kawamoto, Ken Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Experimental and Theoretical Analysis of Energy Capability of Resurf Ldmosfets and Its Correlation with Static Electrical Safe Operating Area (Soa) by Khemka, V Sagawa, M Suzuki, M Ishizaka, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Avalanche Multiplication and Breakdown in Alx Gai-X As (X-<0.9) by Ng, B. K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Design Curves of Breakdown Voltage At Field Plate Edge and Effect on Interface Charge by Chung, Sang-Koo Han, Seung-Youp Source: Microelectronics Journal Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Low-Loss Lateral Trench Sidewall Schottky (Ltss) Rectifier on Soi with High and Sharp Breakdown Voltage by Kumar, M.J Singh, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Equivalent Junction Method to Predict 3-D Effect of Curved-Abrupt P-N Junctions by He, J Xi, X Chan, M Hu, C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Updated Temperature-Dependent Breakdown Coupling Model Including Both Impact Ionization and Tunneling Mechanisms for Aigaas/Ingaas Hemts by Li, L. P Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Two Types of Neural Electron Traps Generated InGate Silicon Dioxide by Zhang, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Transistor Model for Simulating Avalanche-Breakdown Effects in Si Bipolar Circuits by Rickelt, Matthias Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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