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Analytical Study of Short Channel Effects in Fuliy Depleted Double Gate and Cylindrical Gate Mosfets by
  • Aouaj, Abdeliah
Source: Journal of Active and Passive Electronic Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Extremely Scaled Double-Gate Cmos Performance Projections, Including Gils-Controlied Off-State Current by
  • Chong, Yan
  • Fossum, Jerry G
  • Kim, Keunwoo
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Compact Double-Gate Mosfet Model Comprising Quantum-Mecanical and Nonstatic Effects by
  • Baccarani, G
  • Reggiani, S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Impact of Theree-Dimensional Transistor onPattern Area Reduction for Ulsi by
  • Watanabe, Shigeyoshi
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Implementation and Characterization ofDouble-Gate Mosfet Using Lateral Solid-Phase Epitaxy by
  • Liu, Haitao
  • Xiong, Zhibin
  • Sin, Johnny K O
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Finfet Design Considerations Based on 3-D Simulation and Analytical Modeling by
  • Pei J., Guo
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Comprehensive Analytical Subthreshold Swing (S) Model for Double-Gate Mosfets by
  • Chen, Q
  • Agrawal, B
  • Meindl, J. D
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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