Results of search for 'an:720139' › Engr Abul Kalam Library catalog

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		Design of Current Mirror and Temperature Effect with Compensation Technique by Sinha, Praween Kumar Choudhury, Ramakanta Choudhury, Umakanta Source: Journal of Active and Passive Electronic Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Separation and Quantificatio of Parasitic Resistance in Nano-Scale Silicon Mosfet by Lee, Jun-Ha Lee, Hoong-Joo Song, Young-Jin Source: International Transactions on Electrophysics and Applications Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Compact Model of Mosfet Mismatch for Circuit Design by Galup-Montoro, C Schneider, Marcio C Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Interaction of Interface-Traps Located at Various Sites in Mosfets Under Stress by Chen, Gang li, M. F Source: IEEE Transactions on Reliability Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Fabrication Method for Ic-Oriented Si Single-Electron Transistors by ono, Yukinori Yamazaki, K Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Comprehensive Study of Hot-Carrier Induced Interface and Oxide Trap Distributions in Mosfet'S Using a Novel Charge Pumping Technique by Mahapatra, S Parikh, Chetan D Viswanathan, Chand R Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		New Channelengineering for Sub-100 Nm Mos Devices Considering Both Carrier Velocity Overshoot and Statistical Performance Fluctuations by Mizuno, Tomohisa Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Ditributions in Mosfet'S by Mahapatra, S Parikh, Chetan D Rao, R. M. V. G. K Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Polysilicon Gate Enhancement OfRandom Dopant Induced Threshold Voltage Fluctuations in Sub-100 Nm Mosfet'S with Ultrathin Gate Oxide by Asenov, Asen Saini, Subbash Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Evaluation of Mos Devices as Mechanical Stress Sensors by Chen, Tung-Sheng Huang, Yu-Ren Source: IEEE Transactions on Components and Packaging Technologies Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Channel Resistance Derivtive Method for Effective Channel Length Extraction in Lddmosfet'S by Niu, Guofu Cressler, John D Mathew, Suraj J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Dynamic-Stress-Induced Enhanced Degradation of 1/F Noise in N-Mosfet'S by Xu, J. P Cheng, Y.C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Charge-Pumping Technique for ProfilingInterface-States and Oxide-Trapped Charges in Mosfet'S by Wu, Ching-Yuan lin, Da-Wen Wu, Chin-Yuan Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Highly Suppressed Short-Channel Effects in Ultrathin Soi N-Mosft'S by Suzuki, EIIchi Kanemaru, Seigo Kanemaru, Seigo Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Noise Contribution OfBody Resistance in Partialiy-Depleted Soi Mosfet'S by Faccio, Federico Anghinolfi, Francis Cristoloveanu, Sorin Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Threshold Voltage Modek for Ultrathin Sio Mosfet'S Including Short-Channel and Floating-Body Effects by Adan, Alberto O Higashi, Kenchi Fukushima, Yasumori Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Simulation Model for Plasma Ashing Process-Induced Oxide Degradation in Mosfet by You, Kuo-Feng Chang, Minchen Wu, Ching-Yuan Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Approach for Characterizing Structure-Dependent Hot-Carrier Effects in Drain-Engineered Mosfet'S by Chung, S.T Yang, Jiuun-Jer Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Soft Breakdown Model for Thin Thermal Sio2 Films Under Constant Current Stress by Tomita, T Sakurai, T Taniguchi, Kenji Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New "Multifrequency" Charge Pumping Technique to Profile Hot-Carrier-Induced Interface-State Density in Nmosfet'S by Mahapatra, S Parikh, Chetan D Vasi, J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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