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		Controliable Conductive Readout in Self-Assembled, Topologicaliy Confined Ferroelectric Domain Walis by Ma, Ji Zhang, Qinghua Peng, Renci Ma, Jing Source: Nature Nanotechnology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Half-Wave Rectification at Ferroelectric Domain Walis by Schaab, J Skjaervo, Sandra H Krohns, Stephan Dai, Xiaoyu Source: Nature Nanotechnology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Temporary Formation of Highly Conducting Domain Walis for Non-Destructive Read-Out of Ferroelectric Domain-Wali Resistance Switching Memories by Jiang, Jun Bai, Zi Long Chen, Zhi Hui He, Long Source: Nature Materials Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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