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Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Plasma Treated Silicon Nitride by
  • lim, byung-Cheon
  • Choi, Young Jin
  • Jang, Jin
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Cd Model for Asymmetric Trapezoidal Gate Mosfet'S in Trrong Inversion by
  • Wong, S. C
  • Cho, Shih-Keng
  • Houng, Mau-Phon
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Analytical 2d Modeling for Potential Distribution and Threshold Voltage ofShort Channel Fully Depleted Cylindrical Surrounding Gate Mosfet by
  • Aouaj, Abdellah
  • Bouziane, Ahmed
  • Nouacry, Ahmed
Source: International Journal of Electronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
onThreshold Voltage of Symmetrical Dg Mos Capacitor with Intrinsic Silicon Body by
  • Wong, Man
  • Shi, Xuejie
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Threshold Voltage-Related Soft Error Degradation in A Tft Sram Cell by
  • Ikeda, Shuji
  • Yoshida, Yasuko
  • Imato, Koichi
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Cmos Voltage Reference Based on Weighted Vgs for Cmos Low-Dropout Linear Regulator by
  • Leung, Ka Nang
  • Mok, Philip K.T
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Physical Short-Channel Threshold Voltage Model for Undoped Symmetric Double-Gate Mosfets by
  • Chen, Qiang
  • Harrell, Evans M
  • Meindl, James D
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Sub-1-V 15-Ppm/0 C Cmos Bandgap Voltage Reference without Requiring Low Threshold Voltage Device by
  • Leung, K N
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Compact Threshold-Voltage Model for Short-Channel Partially Depleted (Pd) Soi Dynamic-Threshold Mos (Dtmos) Devices by
  • Kuo, J. B
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A 1.2-Gips/W Microprocessor Using Speed-Adaptive Threshold-Voltage Cmos with for ward Bias by
  • Miyazaki, M
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Normalized Mutual Integral Difference Operator: A Novel Eeperimental for Extracting Threshold Voltage of Mosfets by
  • He, J. H
  • Zhang, X .L
  • Wang, Y
  • Xia, X
Source: Microelectronics Journal
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Blind Separation of Signals with Mixed Kurtosis Signs Using Threshold Activation Functions by
  • Mathis, H
Source: Ieee Transactions on Neural Networks
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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