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		Investigation of Inas/Ingaas/Inp Heterojunction Tunneling Field-Effect Transistors by Eun, Hye Rim Woo, Sung Yun Source: Journal of Electrical Engineering and Technology Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Stack Pipe Model for Pipe Jacking Method by Sugimoto, M Asanprakit, Auttakit Source: Journal of Construction Engineering and Management Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Transport Model in N++-Poly/Sio /Si2/P-Sub Mos Capacitors for Low-Voltage Nonvolatile Memory Applications by Irrera, Fernanda Marangelo, Luca Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Effects of Inelastic Scattering on Interband Tunneling in Gasb/Alsb/Inas Broken-Gap Interband Tunneling Structures by liu, Maochang Wang, Yeong-Her Houng, Mau-Phon Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Numerical Analysis OfStorage Times of Dynamic Randpm-Access Memory Celi Incorporating Ultrathin Dielectrics by Romanenko, Alex Y Gosney, W. Milton Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Barrier Height Engineering on Gaas Thz Schottky Diodes by Means of High-Low Doping Ingaas Adn Ingap-Layers by Sassen, Stefan Witzigmann, Bernd Wolk, Claus Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents by Crupi, Felice Neri, Bruno Lombardo, Salvatore Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis and Simulation of A Mid-Infrared P+-Inas0.55 Sb0.15 P0.30/N-Inas0.89 Sb0.11/N+ Inas0.55 Sb0.15 P0.30 Double Heterojunction Photodetector Grown By Lpe by Chakrabarti, P Krier, A Morgan, A F Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Quantum Transport in Double-Gate Mosfets with Complex Band Structure by Xia, tongsheng Register, Leonard F Banerjee, Sanjay K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Origins of Leaky Characteristics of Schottky Diodes on P Gan by Yu, L. S Jia, L Lau, S. S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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