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		Optmization and Realization of Sub-100-Nm Channel Length Single Halo P-Mosfets by Borse, D G K.N, M. Rani Jha, N.K Chandorkar, A. N Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Study of Silc and Interface Trap Generation Due to High Field Stressing and Its Operating Temperature Dependence in 2.2 Nm Gate Dielectrics by Borse, D G Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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