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		Impact of Programming Charge Distribution on Threshold Voltage and Subthreshold Slope of Nrom Memory Cells by Larcher, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Plasma-Induced Micro Breakdown in Small-Area Mosfets by Cellere, Giorgio Larcher, L Valentini, M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Compact Dc Model of Floating Gate Memory Cells without Capacitive Coupling Coefficients by Larcher, L Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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