Your search returned 2 results.

Sort
Unhighlight Highlight
Select all Clear all
Select titles to:
Results
A Physically Based Analytical Model for Threshold Voltage of Strained -Si N-Mosfets by
  • Nayfeh, Hasan M
  • Hoyt, J. W
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
Impact of Ion Implanation Damage and Thermal Budget on Mobility Enhancement in Strained-Si N-Channel Mosfets by
  • Xia, Guangrui
  • Nayfeh, Hasan M
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
Pages