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Structural Optimization of Sutbdg Devices for Low-Power Applications by
  • Xiong, Shiying
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices by
  • Xiong, Shiying
  • Boker, Jeff
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Simulation Study of Gate Iine Edge Roughness Effects on Doping Profiles of Short-Channel Mosfet Devices by
  • Xiong, Shiying
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Sensitivity of Double-Gate and Finfet Devices to Process Variations by
  • Xiong, Shiying
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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