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Quick Planarisation Based on Hydrogen Silsesquioxane (Hsq) for Deep Etched Inp Based Structures by
  • Zegaoui, M
  • Harari, Joseph
Source: IET:IEE: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Comparison Between Carried-Induced Optical Index, Loss Variations and Carrier Lifetime in Gainasp/Inp Heterostructures for 1.55 Um Dos Application by
  • Zegaoui, M
Source: IET:IEE: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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