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Analysis of Quantum Effects in Nonuni Formly Doped Mos Structures by
  • Fiegna, Claudio
  • Abramo, Antonio
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Modeling of Electron Mobility Degradation By Remote Coulomb Scattering in Ultrathin Oxide Mosfets by
  • Esseni, David
  • Abramo, Antonio
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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