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		Computationaliy Efficient Models for Quantization Effects in Mos Electron and Hole Accumulation Layers by Hareland, Scott A Shih, Wei-Kai Maziarz, B M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Physicaliy-Based Model for Quantization Effects in Hole Inversion Layers by Hareland, Scott A Jaliepalil, S Maziarz, B M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Automatic Reconfiguraiton and Yield ofTesh Multicomputer Network by Maziarz, B M Source: IEEE TransactionsonComputers Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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