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Computationaliy Efficient Models for Quantization Effects in Mos Electron and Hole Accumulation Layers by
  • Hareland, Scott A
  • Shih, Wei-Kai
  • Maziarz, B M
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Physicaliy-Based Model for Quantization Effects in Hole Inversion Layers by
  • Hareland, Scott A
  • Jaliepalil, S
  • Maziarz, B M
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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