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		0.15-M Buried-Channel P-Mosfet'S with Ultrathin Boron-Doped Epitaxial Si Layer by Ohguro, Tatsuya Usuda, Kouji Momose, Hisaya Sasaki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Stidu OfManufacturing Feasibility of 1.5- Nm Direct-Tunneling Gate Oxide Mosfet'S Uni Formity, Reliability , and Dopant Penerration OfGate Oxide by Momose, Hisaya Sasaki Nakamura, Shinji Ohguro, Tatsuya Iwai, H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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