An Analytical Method of Evaluating Variation OfThreshold Voltage Shift Caused byNegative-Bias Temperature Stress in Poly-Si Tft'S

By: Material type: ArticleArticleDescription: 165-172 pSubject(s): In: IEEE Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.45, No.01 (Jan. 1998) Available

Visit counter For Websites

Copyright © 
Engr Abul Kalam Library, NEDUET, 2024