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The Relation Phenomena of Positive Charges Inthin Gate Oxide During Fowler-Nordheim Tunneling Stress by
  • Chang, Kow-Ming
  • li, ChII-Horng
  • Yeh, T L
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
High-Performance Rsd Poly-Si Tfts with A New ono Gate Dielectric by
  • Chang, Kow-Ming
  • Yang, Wen-Chih
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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