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The Effect of Gate Recess Profile on Device Performance of Ga Doped-Channel Fet'S by
  • Lu, Shey-Shi
  • Meng, Chin-Chun
  • lin, Yo-Sheng
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
The Determination of S Parameters fromPoles of Voltage Gain Transfer Function for Rf Ic Design by
  • Lin, Yo-Sheng
  • Lu, Shey-Shi
  • Chen, Yu-Chang
Source: Ieee Transactions on Circuits and Systems, I: Fundamental Theory and Applications
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
An Analysis of Small-Signal Gate-Drain Resistance Effect on Rf Power Mosfets by
  • Lin, Yo-Sheng
  • Lu, Shey-Shi
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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