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		Three Mechanisms Determining Short-Channel Effects in Fuliy-Depleted Soi Mosfet'S by Tsuchiya, Toshiaki Sato, Yasuhiro Tomizawa, Masaaki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation of a Multigigahertz Mosfet Amplifier with an on-Chip Inductor Fabricated on a Simox Wafer by Harada, Mitsuru Yamaguchi, Chikara Tsuchiya, Toshiaki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		SuppressingParasitic Bipolar Action in Fuliy-Depleted Mosfet''S/Simox by Using Back-Side Bias-Temperature Treatment by Koizumi, H Tsuchiya, Toshiaki Shimaya, Maskazu Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Direct Measurements of Trap Density in Sige/Si Hetero-Interface and Correlation BetwweenTrap Density and Low-Frequency Noise in Sige Channel Pmosfets by Tsuchiya, toshiaki Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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