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		A Steady Stated Drain Current Technique for Generation and Recombinaton lifetime Measurement InSoi Mosfet by Cheng, Zhi-Uuan ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Role of Electron Traps onPost-Stress Interface Trap Generation in Hot-Carrier Stressed P-Mosfet'S by Ang, D. S ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Unified Model for Self-limiting Hot-Carrier Degradation in Ldd N-Mosfet'S by Ang, D. S ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Modified Lucky Electron Model for Impact Ionization Rate in Nmosfet'S at 77 K by ling, C. H See, lin Ming Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		U Nified Model for Self-limiting Hot-Carrier Degradation in Ldd N-Mopdfet'S by Ang, D. S ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Comparison of Hot-Carrier Degradation in Tungsten Polycide Gate and Poly Gate P-Mosfet'S by Ang, D. S ling, C. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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