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Transistor Noise in Sige Hbt Rf Technology by
  • Niu, Guofu
  • Cressler, John D
Source: IEEE Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Channel Resistance Derivtive Method for Effective Channel Length Extraction in Lddmosfet'S by
  • Niu, Guofu
  • Cressler, John D
  • Mathew, Suraj J
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Noise Parameter Optimization of Uhv/Cvd Sige Hbt'S for Rf and Microwave Applications by
  • Niu, Guofu
  • Ansley, Wililam E
  • Webster, Charles S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Optimization of Sige Hbt'S for Operation at High Current Densities by
  • Joseph, Alvin J
  • Cressler, John D
  • Niu, Guofu
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Quantify Neutral Base Recombination andEffects of Coliector Junction Traps in Uhv/Cvd Sige Hbt'S by
  • Niu, Guofu
  • Cressler, John D
  • Joseph, Alvin J
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Tpta; Resostance Slope-Based Effective Channel Mobility Extraction Method for Deep Submicrometer Cmos Technology by
  • Niu, Guofu
  • Cressler, John D
  • Mathew, Suraj J
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
by
  • Mathew, G
  • Niu, Guofu
  • Dubbelday, Wadad Brooke
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
onConsistent Modeling of Band-Gap Narrowing for Accurate Device-Level Simulation of Scaled Sige Hbts by
  • Shi, Yun
  • Cressler, John D
  • Niu, Guofu
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Logic Synthesis and Circuit Modeling of A Programmable Logic Gate Based on Controlled Quenching of Series-Connected Negative Differential Resistance Devices by
  • Chen, Kevin J
  • Niu, Guofu
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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