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		The Impact Ofintrinsic Device Fluctuations on Cmos Sram Celi Jstability by Bhavnagarwala, A. J Tang, Xinghai Meindl, James D Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Fundamental limit on Binary Switching Energy for Terascale Integration (Tsi) by Meindl, James D Davis, Jeffrey A Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Stochastic Wire-Length Distributio for Gigascale Integration (Gsi)Part I Derivation and Validation by Davis, Jeffrey A De, Vivek Meindl, James D Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Stochastic Wire-Length Distribution for Giascale Integration (Gsi)-PartII Applications to Clock Frequency, Power Dissipation, and Chip Size Estimaton by Davis, Jeffrey A De, Vivek Meindl, James D Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Physical Short-Channel Threshold Voltage Model for Undoped Symmetric Double-Gate Mosfets by Chen, Qiang Harrell, Evans M Meindl, James D Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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