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		A Low-Power Four-Transistor Sram Celi with a Stacked Vertical Poly-Silicon Pmos and a Dual-Word-Voltage Scheme by Kotabe, Akira Osada, Kenichi Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Universal-Vdd 0.65-2.0-V 32-Kb Cache Using a Voltage-Adapted Timing-Generation Scheme and lithographicaliy Symmetrical Celi by Osada, Kenichi Shin, Jinuk Luke Source: IEEE Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		0.4-V Logic-Library-Friendly Sram Array Using Rectangular-Diffusion Cell and Delta-Boosted-Array Voltage Scheme by Yamaoka, M Osada, Kenichi Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Sram Immunity to Cosmic-Ray-Induced Multierrors Based on Analysis of An Induced Parasitic Bipolar Effect by Osada, Kenichi Yamaguchi, Ken Kawahara, Takayuki Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		16.7-Fa/Cell Tunnel-Leakage-Suppressed 16-Mb Sram for Handling Cosmic-Ray-Induced Multierrors by Osada, Kenichi Saitoh, Yoshikazu Ibe, Eishi Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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