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		Strained Silicon Heterostructures Materials and Devices by Maiti, C. K [editor] Chakrabarti, N. B [editor] Ray, S. K [editor] Institution of Electrical Engineers Series: Iee Circuits Devices and Systems Series ; No. 12 Material type: Text Language: English Publication details: London : Institution of Electrical Engineers, c2001 Online access: Table of Contents Availability: Items available for loan: Circulation Section (2)Location, call number: Circulation Section 620.193 MAI, ... Reference Section (1)Location, call number: Reference Section 620.193 MAI.
		Transport Planning for Developing Countries by Ray, S. K [author] Material type: Text Language: English Publication details: New Delhi : Printice-Hall of India, c1995 Online access: Table of Contents Availability: Items available for loan: Circulation Section (1)Location, call number: Circulation Section 629.041724 RAY.
		Biaxial Bending of Cold- Formed Angle Members by Madugula, Murty K. S Ray, S.K Source: Canadian Journal of Civil Engineering Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hole Velocity Overshoot in Partially Strain Compensated Si 0.793 Ge 0.2 C 0.007 Inversion Layers by Kar, G.S Maikap, S Banerjee, S.K Ray, S.K Source: IET:IEE: Electronics Letters Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Electrical Properties of Plasma-Grown Gate Oxides on Tensile-Strained Si1-Ycy Alloy by Mahapatra, R. N Maikap, S Kar, G.S Ray, S.K Source: IET:IEE: Electronics Letters Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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