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Design Issues and Insights for Low-Voltage High-Density Soi Dram by
  • Fossum, Jerry G
  • Houston, Theoder W
  • Chiang, Meng-Chiang
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Comparative Analysis OfDynamic Behavior of Btg/Soi Mosfet'S and Circuits with Distriuted Body Resistance by
  • Workman, Glenn O
  • Fossum, Jerry G
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Extremely Scaled Double-Gate Cmos Performance Projections, Including Gils-Controlied Off-State Current by
  • Chong, Yan
  • Fossum, Jerry G
  • Kim, Keunwoo
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Physical Modeling of Temperature Dependences of Soi Cmos Devices and Circuits Including Self-Heating by
  • Workman, Glenn O
  • Fossum, Jerry G
  • Krishnan, S. R
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Physical Modeling of Temperature Dependences of Soi Cmos Devices and Circuits Including Self-Heating by
  • Workman, Glenn O
  • Fossum, Jerry G
  • Krishnan, S. R
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Performance Projections of Scaled Cmos Devices and Circuits with Strained Si-on-Sige Channels by
  • Fossum, Jerry G
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
onPerformance Advantage of Pd/Soi Cmos with Floating Bodies by
  • Fossum, Jerry G
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Speed Superioty of Scaled Double -Gate Cmos by
  • Fossum, Jerry G
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A Physics-Based Compact Mosfet Model for Circuit Simulation Is Far Superior toEmpirical Standard, But Cad Engineers Don'T Seem to Care Enough to Switch by
  • Fossum, Jerry G
Source: Ieee Circuits and Devices Magazine
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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