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		Surface-Related Drain Current Dispersion Effects in Algan-Gan Hemts by Meneghesso, G Canali, Claudio Chini, Alessandro Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling A Plunging Underflow by Dallimore, Chris J Imberger, Jorg Source: Asce: Journal of Hydraulic Engineering Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Slow Trransients Observed in Algan/Gan Hfets: Effects of Sin Passivation and Uv Iiiumination by Koley, Goutam Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Physics-Based Frequency Dispersion Model of Gan Mesfets by Islam, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Self Consistent Model for Temperature and Current Distribution in Abrupt Heterojunction Bipolar Transistors by Anwar, A F M Jahan, Mirza M Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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