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		High-Current Smali-Parasitic-Capacitance Mosfet on a Poly-Si Interlayed (Psi-)Soi Wafer by Horiuchi, M Teshima, Kszuya Yamaguchi, Ken Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Analytical Method of Evaluating Variation OfThreshold Voltage Shift Caused byNegative-Bias Temperature Stress in Poly-Si Tft'S by Maeda, Shigenobu Maegawa, Masumi Ipposhi, Talashi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Synthesis and Properties of Flourine-Containing Polyimides by Wang, Chung S Yan, Rui Source: Journal of Applied Polymer Science Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analytical Modelling ofKink Regime of A Short Channel Polycrystalline Silicon Thin Film Transistor by Chopra, S Sehgal, A Source: International Journal of Electronics Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Large Grain Poly-Si (-10um) Tfts Prepared By Excimer Laser Aneealing Through A Thick Sion Absorption Layer by Liu, Dheng-Da Source: Ieee Journal of Solid-State Circuits Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Improved Lifetime of Poly-Si Tfts with A Self-Aligned Gate-Overlapped Ldd Structure by Mishima, Y Ebiko, Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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