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An Analysis OfKink Phenomena in Inalas/Ingaas Hemt'S Using Two-Dimensional Device Simulation by
  • Suemitsu, T
  • Enoki, Takatomo
  • Sano, N
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Low-Frequency Noise Properties of Selectively Dry Etched Inp Hemt'S by
  • Duran, Halit C
  • Ren, lin
  • IIegems, Marc
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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