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An Electrical Method for MeasuringDifference in Bandgap AcrossNeutral Base in Sige Hbt'S by
  • Tang, Yue T
  • Hamel, J. S
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Optimization of Sige Hbt'S for Operation at High Current Densities by
  • Joseph, Alvin J
  • Cressler, John D
  • Niu, Guofu
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Velocity, Overshoot Analysis in Sige and Sigec Hbt by
  • Li, Y
  • Cai, R
Source: International Journal of Electronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
onConsistent Modeling of Band-Gap Narrowing for Accurate Device-Level Simulation of Scaled Sige Hbts by
  • Shi, Yun
  • Cressler, John D
  • Niu, Guofu
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
A 32-Word By 32-Bit Three-Port Bipolar Register File Implemented Using A Sige Hbt Bicmos Technology by
  • Steidl, S A
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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